TPC8134,LQ(S

MOSFETs Silicon P-Channel MOS (U-MOS )

1. Applications

0 Lithium-Ion Secondary Batteries

0 Power Management Switches

2. Features

(1) Small footprint due to small and thin package

(2) Low drain-source on-resistance: R_DS(ON) = 39 mΩ (typ.) (V_GS = -10 V)

(3) Low leakage current: I_DSS = -10 μA (max) (V_DS = -40 V)

(4) Enhancement mode: V_th = -0.8 to -2.0 V (V_DS = -10 V, I_D = -0.1 mA)